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AOD458 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD458 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD458 is Pb-free (meets ROHS & Sony 259 specifications). AOD458L is a Green Product ordering option. AOD458 and AOD458L are electrically identical.
TO-252 D-PAK
Features
VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4m (VGS = 10V) RDS(ON) < 5m (VGS = 4.5V) 193 18
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
C C C
Maximum 30 12 85 60 200 45 330 50 25 2.7 1.9 -55 to 175
Units V V A A mJ W W C
TC=25C
G
TC=100C
ID IDM IAR EAR PD PDSM TJ, TSTG
Repetitive avalanche energy L=0.3mH TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 15 44 1.8
Max 20 55 3
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AOD458
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C VGS=4.5V, ID=20A gFS VSD IS Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current 1 100 3.2 5 3.8 107 0.72 1 50 5750 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 640 370 0.4 41 VGS=4.5V, VDS=15V, ID=20A 18 10 13.5 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s 14 58 13.5 39 39 19 20 80 19 55 1 7500 4 6 5 S V A pF pF pF nC nC nC ns ns ns ns ns nC m 1.7 Min 30 0.002 1 5 100 3 Typ Max Units V A nA V A
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0:Nov 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 80 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=2.5V 4.5V 3.0V 10V 100 80 60 ID(A) 40 20 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics VDS=5V
ID (A)
125C
4.63 494 692
25C
593 830
5 Normalized On-Resistance
2.0 1.8 1.6
193 18
VGS=4.5V RDS(ON) (m) 4
VGS=10V, 20A 1.4 1.2 1.0 0.8 0 25 50 VGS=4.5V, 20A
3
VGS=10V
2 0 10 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 75 59 100 125 150
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
142
12 10 ID=20A RDS(ON) (m) 8 125C 6 4 25C 2 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage IS (A)
100 10 1 0.1 0.01 125C 25C
0.001 0.0001 0.00001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 TJ(Max)=175C, TC=25C 10s 100 Power (W) ID (Amps) 100s 10 RDS(ON) limited 1 DC 1ms VDS=15V ID=20A 9000 8000 7000 Capacitance (pF) 6000 5000 4000 3000 2000 1000 0 0 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Coss Crss Ciss
4.63 494 692 593 830
193 18
200 160 120 80 40 0 0.0001
TJ(Max)=175C TC=25C
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJC Normalized Transient Thermal Resistance 10 100
0.001
0.01
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
59 0.1 142
1
10
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 ID(A), Peak Avalanche Current 90 80 70 60 50 40 30 20 10 0.0001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 0.001 TA=25C Power Dissipation (W) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
4.63 494 692 593 830
100 80 Current rating ID(A) Power (W) 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
50 40 30 20 10 0 0.01
193 18
TA=25C Tj=150C
0.1
1
59 142 10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01 Single Pulse 0.0001 0.001 0.01 0.1 1
PD Ton
0.001 0.00001
T 100 1000
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.

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